SKU:67981097585
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 8 - Jul 13
Description
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10x10x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Optional: KF-40 could be connected to a turbo pump (Pic
24o Bi-LSAT Substrate Specifications
99 5 EQ-3Bvalve-1/8BSPP SS Three-Way Ball Valve
Ra(Average Roughness) : < 0
Upper and lower platens are water-cooled
The temperature of instrument and reagents must be between 15º and 40º C (59º and 104ºF)
26650 cylindrical cases
NRTL or CSA certification is available at extra cost
≤350 Pa Features & Structure
The pulling device is high vacuum compatible with SS bellow tube
Temperature Control
Thermal Conductivity: 640
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